[PS-4-5] Resistance Switching Memory Operation of CaF₂/Si/CaF₂ Resonant-tunneling Quantum-well Structures using Nanocrystalline-Si Secondary Barrier Layers

^○K. Suda¹, Y. Kuwata¹, M. Watanabe¹ (1.Tokyo Tech(Japan))

https://doi.org/10.7567/SSDM.2015.PS-4-5