[PS-6-1] Accuracy of Recessed Gate for GaN Power FETs and High Temperature Capability of Diamond Heat Sink

^○Y. T. Kim¹, J. H. Lee², Y. M. Jhon¹ (1.Korea Inst. of Sci. & Tech., 2.Kyungpook National Univ.(Korea))

https://doi.org/10.7567/SSDM.2015.PS-6-1