[PS-6-11] DC Characteristics in Nearly Lattice-Matched InAlN/AlGaN Heterostructure Field-Effect Transistors

^○T. Tsutsumi¹, G. Nishino¹, J. Freedsman¹, M. Miyoshi¹, T. Egawa¹ (1.Nagoya Inst. of Tech.(Japan))

https://doi.org/10.7567/SSDM.2015.PS-6-11