[PS-6-12] High-Quality PECVD SiO₂ Gate Oxide for Use in Normally-Off AlGaN/GaN Recessed MOS-HFETs

^○H. S. Kim¹, J. G. Lee², S. H. Park¹, S. W. Han¹, K. S. Seo³, H. Y. Cha¹ (1.Hongik Univ., 2.Univ. of Texas at Dallas, 3.Seoul National Univ.(Korea))

https://doi.org/10.7567/SSDM.2015.PS-6-12