The Japan Society of Applied Physics

[PS-6-13] Analysis of Post-Deposition Annealing Effects on Insulator/Semiconductor Interface of Al2O3/AlGaN/GaN High-Electron-Mobility Transistors on Si Substrates

T. Kubo1, M. Miyoshi1, T. Egawa1 (1.Nagoya Inst. of Tech.(Japan))

https://doi.org/10.7567/SSDM.2015.PS-6-13