[PS-6-13] Analysis of Post-Deposition Annealing Effects on Insulator/Semiconductor Interface of Al₂O₃/AlGaN/GaN High-Electron-Mobility Transistors on Si Substrates

^○T. Kubo¹, M. Miyoshi¹, T. Egawa¹ (1.Nagoya Inst. of Tech.(Japan))

https://doi.org/10.7567/SSDM.2015.PS-6-13