[PS-6-19] Low Interface Trap Density HfO₂/Al₂O₃/InAs MOS Capacitors Prepared by Nitrogen Plasma Treatment

^○G. B. He¹, W. J. Hsueh¹, C. Y. Chen¹, J. I. Chyi^1,2 (1.National Central Univ., 2.Research Center for Applied Science, Academia Sinica(Taiwan))

https://doi.org/10.7567/SSDM.2015.PS-6-19