The Japan Society of Applied Physics

[PS-6-21] Structural Properties and Electrical Characteristics of High-κ Lu2O3 and Lu2TiO5 Gate Dielectrics for InGaZnO Thin-Film Transistors

T. M. Pan1, C. H. Chen1, H. J. Wang1, I. C. Huang1 (1.Chang Gung Univ.(Taiwan))

https://doi.org/10.7567/SSDM.2015.PS-6-21