[PS-6-21] Structural Properties and Electrical Characteristics of High-κ Lu₂O₃ and Lu₂TiO₅ Gate Dielectrics for InGaZnO Thin-Film Transistors

^○T. M. Pan¹, C. H. Chen¹, H. J. Wang¹, I. C. Huang¹ (1.Chang Gung Univ.(Taiwan))

https://doi.org/10.7567/SSDM.2015.PS-6-21