[PS-6-22] Impact of Gate Dielectrics and Oxygen Annealing on Tin-Oxide Thin-Film Transistors

^○C. W. Zhong¹, H. C. Lin¹, J. R. Tsai², K. C. Liu³, T. Y. Huang¹ (1.National Chiao Tung Univ., 2.Asia Univ., 3.Chang Gung Univ.(Taiwan))

https://doi.org/10.7567/SSDM.2015.PS-6-22