[PS-6-23] Mobility Improvement Based on Mobility Model of Crystalline In-Ga-Zn-Oxide with High Indium Composition

^○K. Tsutsui¹, D. Matsubayashi¹, N. Ishihara¹, T. Takasu¹, S. Matsuda¹, S. Yamazaki¹ (1.Semiconductor Energy Lab. Co., Ltd.(Japan))

https://doi.org/10.7567/SSDM.2015.PS-6-23