The Japan Society of Applied Physics

[PS-6-23] Mobility Improvement Based on Mobility Model of Crystalline In-Ga-Zn-Oxide with High Indium Composition

K. Tsutsui1, D. Matsubayashi1, N. Ishihara1, T. Takasu1, S. Matsuda1, S. Yamazaki1 (1.Semiconductor Energy Lab. Co., Ltd.(Japan))

https://doi.org/10.7567/SSDM.2015.PS-6-23