The Japan Society of Applied Physics

[PS-6-3] Improved Linearity and Reliability in GaN MOS-HEMTs Using Nanolaminate La2O3/SiO2 Gate Dielectric

W. C. Shih1, H. H. Hsu1, Y. X. Huang1, T. W. Lin1, C. H. Wu1, Y. C. Lin1, J. S. Maa1, E. Y. Chang1, K. Kakushima2, H. Iwai2 (1.National Chiao Tung Univ., 2.Tokyo Tech(Taiwan))

https://doi.org/10.7567/SSDM.2015.PS-6-3