Improved Linearity and Reliability in GaN MOS-HEMTs Using Nanolaminate La2O3/SiO2 Gate Dielectric

W. C. Shih

doi:https://doi.org/10.7567/SSDM.2015.PS-6-3

[PS-6-3] Improved Linearity and Reliability in GaN MOS-HEMTs Using Nanolaminate La₂O₃/SiO₂ Gate Dielectric

W. C. Shih¹, H. H. Hsu¹, Y. X. Huang¹, T. W. Lin¹, ^○C. H. Wu¹, Y. C. Lin¹, J. S. Maa¹, E. Y. Chang¹, K. Kakushima², H. Iwai² (1.National Chiao Tung Univ., 2.Tokyo Tech(Taiwan))

https://doi.org/10.7567/SSDM.2015.PS-6-3

2015 International Conference on Solid State Devices and Materials

[PS-6-3] Improved Linearity and Reliability in GaN MOS-HEMTs Using Nanolaminate La2O3/SiO2 Gate Dielectric

[PS-6-3] Improved Linearity and Reliability in GaN MOS-HEMTs Using Nanolaminate La₂O₃/SiO₂ Gate Dielectric