Study of AlGaN/GaN Tri-Gate HEMTs for Device Performance Improvement

C. C. Liu

doi:https://doi.org/10.7567/SSDM.2015.PS-6-7

2015 International Conference on Solid State Devices and Materials

Sep 27, 2015 - Sep 30, 2015
Sapporo Convention Center, Sapporo, Japan

[PS-6-7] Study of AlGaN/GaN Tri-Gate HEMTs for Device Performance Improvement

^○C. C. Liu¹, Y. X. Huang¹, W. C. Shih¹, H. H. Hsu¹, Y. C. Lin¹, J. S. Maa¹, E. Y. Chang¹, H. Iwai² (1.National Chiao Tung Univ., 2.Tokyo Tech(Taiwan))

https://doi.org/10.7567/SSDM.2015.PS-6-7

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