The Si-Implanted Source/Drain of GaN-based High Electron Mobility Transistors by Using Stacking AlN Protection Layers

A. J. Tzou

doi:https://doi.org/10.7567/SSDM.2015.PS-6-8

[PS-6-8] The Si-Implanted Source/Drain of GaN-based High Electron Mobility Transistors by Using Stacking AlN Protection Layers

^○A. J. Tzou¹, D. H. Hsieh¹, J. K. Huang¹, C. J. Su², Z. Y. Li^1,3, C. Y. Chang^1,4, H. C. Kuo¹ (1.National Chiao Tung Univ., 2.National Nano Device Labs., 3.Epistar Inc., 4.Academia Sinica(Taiwan))

https://doi.org/10.7567/SSDM.2015.PS-6-8

2015 International Conference on Solid State Devices and Materials

[PS-6-8] The Si-Implanted Source/Drain of GaN-based High Electron Mobility Transistors by Using Stacking AlN Protection Layers