The Japan Society of Applied Physics

[PS-6-9] [No-show]High Performance of AlGaN/GaN HEMT Device with Embedded Multiple Graphene Layers

C. Y. Lee1, Y. P. Lan2, Y. S. Gau3, C. H. Chen3, R. M. Lin3, C. Y. Chang1,2 (1.Academia Sinica, 2.National Chiao Tung Univ., 3.Chang Gung Univ.(Taiwan))

https://doi.org/10.7567/SSDM.2015.PS-6-9