[No-show]High Performance of AlGaN/GaN HEMT Device with Embedded Multiple Graphene Layers

C. Y. Lee

doi:https://doi.org/10.7567/SSDM.2015.PS-6-9

2015 International Conference on Solid State Devices and Materials

Sep 27, 2015 - Sep 30, 2015
Sapporo Convention Center, Sapporo, Japan

[PS-6-9] [No-show]High Performance of AlGaN/GaN HEMT Device with Embedded Multiple Graphene Layers

^○C. Y. Lee¹, Y. P. Lan², Y. S. Gau³, C. H. Chen³, R. M. Lin³, C. Y. Chang^1,2 (1.Academia Sinica, 2.National Chiao Tung Univ., 3.Chang Gung Univ.(Taiwan))

https://doi.org/10.7567/SSDM.2015.PS-6-9

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