[PS-7-24] Fabrication of Mesa-type Mg₂Si Pn-junction Photodiode for 2 - 4 μm IR-detection

^○T. Akiyama¹, N. Hori¹, H. Udono¹ (1.Ibaraki Univ.(Japan))

https://doi.org/10.7567/SSDM.2015.PS-7-24