Improving Crystalline Quality of Sputtering Deposited MoS2 Thin Film by Post-Sulfurization Annealing Using (t-C4H9)2S2

S. Ishihara

doi:https://doi.org/10.7567/SSDM.2015.PS-8-13

[PS-8-13] Improving Crystalline Quality of Sputtering Deposited MoS₂ Thin Film by Post-Sulfurization Annealing Using (t-C₄H₉)₂S₂

^○S. Ishihara¹, K. Suda¹, Y. Hibino¹, N. Sawamoto¹, T. Ohashi², S. Yamaguchi², K. Matsuura², H. Machida³, M. Ishikawa³, H. Sudoh³, H. Wakabayashi², A. Ogura¹ (1.Meiji Univ., 2.Tokyo Tech, 3.Gas-phase Growth Ltd.(Japan))

https://doi.org/10.7567/SSDM.2015.PS-8-13

2015 International Conference on Solid State Devices and Materials

[PS-8-13] Improving Crystalline Quality of Sputtering Deposited MoS2 Thin Film by Post-Sulfurization Annealing Using (t-C4H9)2S2

[PS-8-13] Improving Crystalline Quality of Sputtering Deposited MoS₂ Thin Film by Post-Sulfurization Annealing Using (t-C₄H₉)₂S₂