[PS-8-24] Behavior of Si Atoms, Ge Atoms and Vacancies for Flash Lamp Annealing

^○A. Heya¹, N. Matsuo¹, S. Hirano¹, Y. Nakamura², T. Yokomori², M. Yoshioka² (1.Univ. of Hyogo, 2.USHIO Inc.(Japan))

https://doi.org/10.7567/SSDM.2015.PS-8-24