Oxygen Partial Pressure Dependence of Ti-Zn-O Thin-Film Transistors Fabricated on Flexible Plastic Substrate at Low Temperature

G. D. Cui

doi:https://doi.org/10.7567/SSDM.2015.PS-9-2

[PS-9-2] Oxygen Partial Pressure Dependence of Ti-Zn-O Thin-Film Transistors Fabricated on Flexible Plastic Substrate at Low Temperature

^○G. D. Cui¹, D. D. Han¹, W. Yu¹, P. Shi¹, Y. Zhang¹, L. L. Huang¹, Y. Y. Cong¹, X. L. Zhou¹, X. M. Zhang¹, S. D. Zhang¹, X. Zhang¹, Y. Wang¹ (1.Peking Univ.(China))

https://doi.org/10.7567/SSDM.2015.PS-9-2

2015 International Conference on Solid State Devices and Materials

[PS-9-2] Oxygen Partial Pressure Dependence of Ti-Zn-O Thin-Film Transistors Fabricated on Flexible Plastic Substrate at Low Temperature