[PS-9-6] A Quasi-ballistic Transport Model for Top- and Back-gated Graphene Nanoribbon Field-effect Transistors

^○G. Hu¹, S. Hu¹, L. Wang¹, R. Liu¹, L. Zheng¹ (1.Fudan Univ.(China))

https://doi.org/10.7567/SSDM.2015.PS-9-6