Impact of Ultra-high Sn Content Sn<sub>x</sub>Ge<sub>1-x</sub> Interlayer on Reducing Schottky Barrier Height at Metal/n-Ge Interface

A. Suzuki

[PS-1-12] Impact of Ultra-high Sn Content Sn_xGe_1-x Interlayer on Reducing Schottky Barrier Height at Metal/n-Ge Interface

^○A. Suzuki¹, O. Nakatsuka¹, S. Shibayama^1,2, M. Sakashita¹, W. Takeuchi¹, M. Kurosawa^1,3, S. Zaima^1,3 (1.Graduate School of Eng., Nagoya Univ., 2.Res. Fellow of The Japan Society for the Promotion of Sci., 3.EcoTopia Sci. Inst., Nagoya Univ.(Japan))

2015 International Conference on Solid State Devices and Materials

[PS-1-12] Impact of Ultra-high Sn Content SnxGe1-x Interlayer on Reducing Schottky Barrier Height at Metal/n-Ge Interface

[PS-1-12] Impact of Ultra-high Sn Content Sn_xGe_1-x Interlayer on Reducing Schottky Barrier Height at Metal/n-Ge Interface