[PS-1-2] Impact of in situ Plasma Enhanced Atomic Layer Deposition on the Electrical Properties of HfO2/In0.53Ga0.47As MOSCAPs for Low EOT and Low Interface State Densit
○Q. H. Luc1, H. B. Do1, S. P. Cheng1, J. H. Chen1, S. H. Huynh1, P. C. Chang1, Y. C. Lin1, E. Y. Chang1
(1.National Chiao Tung Univ.(Taiwan))
