New Structural Properties of Ferroelectric Y2O3-doped HfO2 Films Probed by Microscopic Raman Spectroscopy Measurements

2015 International Conference on Solid State Devices and Materials

Sep 27, 2015 - Sep 30, 2015
Sapporo Convention Center, Sapporo, Japan

^○K. Izukashi^1,2, T. Nishimura^1,2, S. Migita^2,3, A. Toriumi^1,2 (1.Univ. of Tokyo, 2.AIST, 3.JST-CREST(Japan))