Sub-0.2V Switching Voltage of Negative Capacitance Double Gate Tunnel FET using Ferroelectric Gate

M. H. Lee

2015 International Conference on Solid State Devices and Materials

Sep 27, 2015 - Sep 30, 2015
Sapporo Convention Center, Sapporo, Japan

[PS-1-5] Sub-0.2V Switching Voltage of Negative Capacitance Double Gate Tunnel FET using Ferroelectric Gate

^○M. H. Lee¹, C. Liu¹, P. G. Cheng¹, C. C. Cheng¹, K. Y. Chu¹, M. J. Xie¹, S. N. Liu¹, J. W. Lee¹, S. J. Huang¹, M. H. Liao² (1.National Taiwan Normal Univ., 2.National Taiwan Univ.(Taiwan))

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