UV Raman and Multiwavelength Photoluminescence Characterization of Ion Implanted Silicon for In-Line Dopant Activation Process Monitoring Applications

2015 International Conference on Solid State Devices and Materials

Sep 27, 2015 - Sep 30, 2015
Sapporo Convention Center, Sapporo, Japan

^○W. S. Yoo¹, T. Ishigaki¹, T. Ueda¹, K. Kang¹, N. Hasuike², H. Harima², M. Yoshimoto² (1.WaferMasters, Inc., 2.Kyoto Inst. of Tech.(USA))