Electron G-factor Engineering in GaAs Quantum Nano-Disks Fabricated by Defect-Free Neutral Beam Etching Process

Y. C. Tsai

2015 International Conference on Solid State Devices and Materials

2015年9月27日〜 2015年9月30日
Sapporo Convention Center, Sapporo, Japan

[PS-12-16] Electron G-factor Engineering in GaAs Quantum Nano-Disks Fabricated by Defect-Free Neutral Beam Etching Process

^○Y. C. Tsai¹, L. W. Yang¹, Y. Li¹, O. Voskoboynikov¹, A. Higo², A. Murayama³, S. Samukawa² (1.National Chiao Tung Univ., 2.Tohoku Univ., 3.Hokkaido Univ.(Taiwan))

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