[PS-14-12] Photoemission Spectroscopy Measurements of p⁺-Si/n-SiC and n⁺-Si/n-SiC Junctions by Surface Activated Bonding

^○N. Shigekawa¹, J. Liang¹, M. Shingo², M. Arai³, K. Shiojima² (1.Osaka City Univ., 2.Univ. of Fukui, 3.New Japan Radio Co., Ltd.(Japan))