[PS-14-5] Transport Characteristics of Minority Carriers in 4H-SiC/Si Heterojunction Bipolar Transistor Structures Fabricated by Surface Activated Bonding

^○J. Liang¹, S. Shimizu¹, S. Nishida¹, N. Shigekawa¹, M. Arai² (1.Osaka City Univ., 2.New Japan Radio Co., Ltd(Japan))