[PS-14-6] Improved Electrical Properties of 4H-SiC MOS Devices with High Temperature Thermal Oxidation

H. Xu^1,2, Q. Yang¹, M. Zhao¹, S. Wang¹, ^○Z. Jin¹, X. Liu¹, A. Chanthaphan², Y. Cheng², T. Hosoi², T. Shimura², H. Watanabe² (1.Institute of Microelectronics, Chinese Academy of Sciences, 2.Osaka Univ.(China))