2015 International Conference on Solid State Devices and Materials

Sep 27, 2015 - Sep 30, 2015
Sapporo Convention Center, Sapporo, Japan

[PS-14-7] Removal of Near-Interface Oxide Traps at SiO₂/SiC Interface by Post-Oxidation Annealing in Reducing Ambient

^○H. Kajifusa¹, H. Hirai¹, Y. Fujino¹, K. Kita¹ (1.Univ. of Tokyo(Japan))

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