2015 International Conference on Solid State Devices and Materials

2015年9月27日〜 2015年9月30日
Sapporo Convention Center, Sapporo, Japan

[PS-14-8] Charge Distribution in Termination Area of 4H-SiC Diodes Analyzed by Measuring Depletion-layer Capacitance

^○H. Matsushima¹, H. Okino¹, K. Mochizuki¹, R. Yamada¹ (1.Hitachi, Ltd.(Japan))

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