Preparation of High Performance SiN<sub>X</sub> Films Deposited by Reactive Sputtering and PECVD at Low Temperatures

2015 International Conference on Solid State Devices and Materials

Sep 27, 2015 - Sep 30, 2015
Sapporo Convention Center, Sapporo, Japan

^○M. Sato¹, M. B. Takeyama¹, Y. Nakata², Y. Kobayashi², T. Nakamura², A. Noya¹ (1.Kitami Inst. of Tech., 2.Fujitsu Laboratories Ltd.(Japan))