[PS-3-12] Investigation of Trap Properties in High-k/Metal Gate pMOSFETs of Higher Al Energy and Concentration Ion Implantation on Random Telegraph Noise

^○T. H. Kao¹, S. J. Chang¹, Y. K. Fang¹, P. C. Huang¹, Y. K. Su¹, Y. J. Shen¹, C. Y. Wu², S. L. Wu² (1.National Cheng Kung Univ., 2.Cheng Shiu Univ.(Taiwan))