2015 International Conference on Solid State Devices and Materials

Sep 27, 2015 - Sep 30, 2015
Sapporo Convention Center, Sapporo, Japan

[PS-3-3] RF Characteristics of Poly-Si TFTs with HfO₂ Gate Dielectric Fabricated by Microwave Annealing

J. J. Tsai¹, ^○H. H. Hu¹ (1.National Taipei Univ. of Tech.(Taiwan))

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