The Japan Society of Applied Physics

[PS-6-10] 2-Dimentional Characterization of Ion-Implantation Damage in GaN Schottky Contacts Using Scanning Internal Photoemission Microscopy

K. Shiojima1, S. Murase1, S. Yamamoto1, T. Mishima2, T. Nakamura2 (1.Univ. of Fukui, 2.Hosei Univ.(Japan))