2015 International Conference on Solid State Devices and Materials
Sep 27, 2015 - Sep 30, 2015 Sapporo Convention Center, Sapporo, Japan
[PS-6-13] Analysis of Post-Deposition Annealing Effects on Insulator/Semiconductor Interface of Al2O3/AlGaN/GaN High-Electron-Mobility Transistors on Si Substrates
○T. Kubo1, M. Miyoshi1, T. Egawa1 (1.Nagoya Inst. of Tech.(Japan))
