[PS-6-19] Low Interface Trap Density HfO2/Al2O3/InAs MOS Capacitors Prepared by Nitrogen Plasma Treatment ○G. B. He1, W. J. Hsueh1, C. Y. Chen1, J. I. Chyi1,2 (1.National Central Univ., 2.Research Center for Applied Science, Academia Sinica(Taiwan))
