The Japan Society of Applied Physics

2015 International Conference on Solid State Devices and Materials

2015 International Conference on Solid State Devices and Materials

Sep 27, 2015 - Sep 30, 2015
Sapporo Convention Center, Sapporo, Japan

[PS-6-21] Structural Properties and Electrical Characteristics of High-κ Lu2O3 and Lu2TiO5 Gate Dielectrics for InGaZnO Thin-Film Transistors

○T. M. Pan1, C. H. Chen1, H. J. Wang1, I. C. Huang1 (1.Chang Gung Univ.(Taiwan))