2015 International Conference on Solid State Devices and Materials

Sep 27, 2015 - Sep 30, 2015
Sapporo Convention Center, Sapporo, Japan

[PS-7-24] Fabrication of Mesa-type Mg₂Si Pn-junction Photodiode for 2 - 4 μm IR-detection

^○T. Akiyama¹, N. Hori¹, H. Udono¹ (1.Ibaraki Univ.(Japan))

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