[PS-8-9] Selective-Area Growth of Heavily N-Doped C-GaN/GaAs Nanostubs on Si(100) Substrate by Molecular Beam Epitaxy

^○Y. J. Chang¹, B. Beekley¹, M. Goorsky¹, J. Woo¹ (1.Univ. of California at Los Angeles(USA))