2015 International Conference on Solid State Devices and Materials

2015年9月27日〜 2015年9月30日
Sapporo Convention Center, Sapporo, Japan

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894件中(351 - 360)

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[PS-1-15] Formation of Single Crystalline Silicon with Midair Cavity for Meniscus Force-Mediated Local Layer Transfer and Fabrication of High-Performance MOSFETs on Insulator

^○M. Akazawa¹, S. Takeshima¹, A. Nakagawa¹, K. Hiramatsu¹, S. Higashi¹ (1.Hiroshima Univ.(Japan))

2015 International Conference on Solid State Devices and Materials |PDF ダウンロード

[PS-1-16] Comprehensive Characterization of Generated Trap Sites in Gate Insulator using Advanced Stress-induced Leakage Current Simulator

^○Y. Higashi¹, J. Chen¹, T. Ishihara¹ (1.Toshiba Corp.(Japan))

2015 International Conference on Solid State Devices and Materials |PDF ダウンロード

[PS-1-17] First-Principles Study on Hydrogen Annealing Effect in Si/SiO₂ Interface by Thermal Oxidation

^○S. Kawachi¹, H. Hiroki¹, M. Araidai¹, H. Kageshima^2,4, T. Endoh^3,4, K. Shiraishi^1,4 (1.Nagoya Univ., 2.Shimane Univ., 3.Tohoku Univ., 4.JST-ACCEL(Japan))

2015 International Conference on Solid State Devices and Materials |PDF ダウンロード

[PS-1-18] Angle-resolved Photoelectron Spectroscopy Studies of Initial Stage of Thermal Oxidation on 4H-SiC (0001)

^○H. Arai¹, H. Nohira¹ (1.Tokyo City Univ.(Japan))

2015 International Conference on Solid State Devices and Materials |PDF ダウンロード

[PS-1-19L] Investigation and Comparison of Quantum-Capacitance Induced Inversion-Charge Loss for Ultra-Thin-Body and Double-Gate III-V n-MOSFETs

^○S. L. Shen¹, H. H. Shen¹, C. H. Yu¹, P. Su¹ (1.National Chiao Tung Univ.(Taiwan))

2015 International Conference on Solid State Devices and Materials |PDF ダウンロード

[PS-1-20L] New Structural Properties of Ferroelectric Y₂O₃-doped HfO₂ Films Probed by Microscopic Raman Spectroscopy Measurements

^○K. Izukashi^1,2, T. Nishimura^1,2, S. Migita^2,3, A. Toriumi^1,2 (1.Univ. of Tokyo, 2.AIST, 3.JST-CREST(Japan))

2015 International Conference on Solid State Devices and Materials |PDF ダウンロード

[PS-2-1] Mechanical Properties of Electrodeposited Gold for MEMS Device

^○M. Yoshiba^1,2, C. Y. Chen^1,2, T. F. M. Chang^1,2, D. Yamane^1,2, K. Machida^1,2,3, K. Masu^1,2, M. Sone^1,2 (1.Tokyo Tech, 2.JST-CREST, 3.NTT Adv. Tech. Corp.(Japan))

2015 International Conference on Solid State Devices and Materials |PDF ダウンロード

[PS-2-2] Proposal of a Simple MEMS Phase Shifter Based on Effective Dielectric Constant Modulation

^○D. Nakano¹, M. Mori¹, K. Maezawa¹, H. Ishii², H. Ando³ (1.Univ. of Toyama, 2.Toyohashi Univ. of Tech., 3.National Inst. of Tech., Toyota College(Japan))

2015 International Conference on Solid State Devices and Materials |PDF ダウンロード

[PS-2-3] Study on Ti/Au Two-Layered Cantilevers with Different Aspect Ratio for MEMS Devices

^○M. Teranishi^1,2, T. F. M. Chang^1,2, C. Y. Chen^1,2, T. Konishi³, K. Machida^1,2,3, H. Toshiyoshi^1,4, D. Yamane^1,2, K. Masu^1,2, M. Sone^1,2 (1.JST-CREST, 2.Tokyo Tech, 3.NTT Adv. Tech. Corp., 4.Univ. of Tokyo(Japan))

2015 International Conference on Solid State Devices and Materials |PDF ダウンロード

[PS-2-4] Micro-Texture Dependence of the Strength of Electroplated Copper Fine Bumps Used for 3-Dimensonal Integration

^○M. Gotoh¹, K. Suzuki¹, H. Miura¹ (1.Tohoku Univ.(Japan))

2015 International Conference on Solid State Devices and Materials |PDF ダウンロード

894件中(351 - 360)

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