[G-3-2L] Fabrication and Magnetic Properties of Co-doped La_0.5Sr_0.5TiO₃ Nanofibers

^○S. Maensiri¹, W. Ponhan², V. Amornkitbamrung² (1.Suranaree Univ. of Tech., 2.Khon Kaen Univ.(Thailand))

2015 International Conference on Solid State Devices and Materials |Tue. Sep 29, 2015 9:15 AM - 9:30 AM |PDF Download

[G-3-3] Characteristics of Highly Stacked InAs Quantum-dot Laser Grown on Vicinal (001)InP Substrate

^○K. Akahane¹, N. Yamamoto¹, T. Umezawa¹, A. Matsumoto¹, T. Kawanishi^1,2 (1.NICT, 2.Waseda Univ.(Japan))

2015 International Conference on Solid State Devices and Materials |Tue. Sep 29, 2015 9:30 AM - 9:45 AM |PDF Download

[G-3-4] Selective Epitaxy of Ge on Nano-tip Patterned Si (001): Towards Defect-free Ge Islands

^○G. Niu¹, G. Capellini^1,2, T. Niermann³, M. Salvalaglio⁴, A. Marzegalli⁴, M. A. Schubert¹, P. Zaumseil¹, H. M. Krause¹, O. Skibitzki¹, M. Lehmann³, F. Montalenti⁴, Y. H. Xie⁵, SchroederT. ^1,6 (1.IHP, 2.Univ. Roma Tre, 3.Tech. Univ. Berlin, 4.Univ. degli Studi di Milano-Bicocca, 5.UCLA, 6.BTU Cottbus-Senftenberg(Germany))

2015 International Conference on Solid State Devices and Materials |Tue. Sep 29, 2015 9:45 AM - 10:00 AM |PDF Download

[G-3-5] Miniband Formulation in Ge/Si Quantum Dot Array

^○Y. C. Tsai¹, M. Y. Lee¹, Y. Li¹, S. Samukawa² (1.National Chiao Tung Univ., 2.Tohoku Univ.(Taiwan))

2015 International Conference on Solid State Devices and Materials |Tue. Sep 29, 2015 10:00 AM - 10:15 AM |PDF Download

[G-3-6] Formation and Characterization of High Density FePt Nanodots on SiO₂ Induced by Remote Hydrogen

^○K. Makihara¹, Y. Kabeya¹, A. Ohta¹, T. Kato¹, A. Iwata¹, S. Miyazaki¹ (1.Nagoya Univ.(Japan))

2015 International Conference on Solid State Devices and Materials |Tue. Sep 29, 2015 10:15 AM - 10:30 AM |PDF Download

[G-3-7] In Situ TEM Observation of Dynamic Behavior of Metal-Based Nanoparticles in Ionic Liquid

^○K. Kogure¹, J. Ishioka¹, K. Ofuji¹, R. Mirza¹, S. Yatsu¹, T. Shibayama¹, S. Watanabe¹ (1.Hokkaido Univ.(Japan))

2015 International Conference on Solid State Devices and Materials |Tue. Sep 29, 2015 10:30 AM - 10:45 AM |PDF Download

[G-4-1] (Invited) Crystal Growth of GeSn-related Group-IV Thin Films for Integrating on Si Nanoelectronics Platform

^○S. Zaima^1,2, O. Nakatsuka², T. Asano^2,3, T. Yamaha^2,3, S. Ike^2,3, A. Suzuki², M. Kurosawa^1,2,4, W. Takeuchi², M. Sakashita² (1.EcoTopia Sci. Inst., Nagoya Univ., 2.Grad. Sc. Eng., Nagoya Univ., 3.JSPS Reserach Fellow, 4.Inst.Adv. Res., Nagoya Univ.(Japan))

2015 International Conference on Solid State Devices and Materials |Tue. Sep 29, 2015 3:40 PM - 4:10 PM |PDF Download

[G-4-2] Sn-doped Al-induced Layer Exchange for Large-grained GeSn Thin Films on Insulators

^○N. Oya¹, K. Toko¹, T. Suemasu¹ (1.Univ. of Tsukuba(Japan))

2015 International Conference on Solid State Devices and Materials |Tue. Sep 29, 2015 4:10 PM - 4:25 PM |PDF Download

[G-4-3] Low-Temperature (~150°C) Solid-Phase Epitaxy of a-GeSn/c-Ge for High Non-Equilibrium Substitutional Sn-Concentration GeSn

^○T. Sadoh¹, A. Ooato¹, J. Park¹, M. Miyao¹ (1.Kyushu Univ.(Japan))

2015 International Conference on Solid State Devices and Materials |Tue. Sep 29, 2015 4:25 PM - 4:40 PM |PDF Download

[G-4-4] Influence of Precursor Gas on SiGe Epitaxial Material Quality in Terms of Structural and Electrical Defects

^○S. Ike^1,2,3, E. Simoen³, Y. Shimura^3,4,5, A. Hikavyy³, W. Vandervorst^3,4, R. Loo³, W. Takeuchi¹, O. Nakatsuka¹, S. Zaima^1,6 (1.Graduate School of Eng., Nagoya Univ., 2.Research Fellow of JSPS, 3.Imec, 4.KU Leuven, 5.FWO Pegasus Marie Curie Fellow, 6.EcoTopia Sci. Inst., Nagoya Univ.(Japan))

2015 International Conference on Solid State Devices and Materials |Tue. Sep 29, 2015 4:40 PM - 4:55 PM |PDF Download