10:00 〜 10:20

[A-5-02] Theoretical Investigation and Benchmarking of Intrinsic Drain-Induced-Barrier-Lowering (DIBL) for Ultra-Thin-Body III-V-on-Insulator n-MOSFETs

^○C. -L. Yu¹, C. -H. Yu¹, P. Su¹ (1.NCTU(Taiwan))

https://doi.org/10.7567/SSDM.2016.A-5-02