11:45 AM - 12:05 PM
[A-6-02] Performance Improvement in Uniaxially Tensile Stressed GeSn FinTFET Investigated by Simulation: Impact of Stress Direction
○H. Wang1, G. Han1, Y. Liu1, C. Zhang1, J. Zhang1, Y. Hao1
(1.Xidian Univ.(China))
https://doi.org/10.7567/SSDM.2016.A-6-02