11:45 〜 12:05

[A-6-02] Performance Improvement in Uniaxially Tensile Stressed GeSn FinTFET Investigated by Simulation: Impact of Stress Direction

^○H. Wang¹, G. Han¹, Y. Liu¹, C. Zhang¹, J. Zhang¹, Y. Hao¹ (1.Xidian Univ.(China))

https://doi.org/10.7567/SSDM.2016.A-6-02