Switching Mechanism in Resistive Random Access Memory by First-Principles Calculation Using Practical Model Based on Experimental Results

T. Moriyama

doi:https://doi.org/10.7567/SSDM.2016.B-1-04

2:40 PM - 3:00 PM

[B-1-04] Switching Mechanism in Resistive Random Access Memory by First-Principles Calculation Using Practical Model Based on Experimental Results

^○T. Moriyama¹, T. Yamasaki², S. Hida¹, T. Ohno^2,3, S. Kishida^1,4, K. Kinoshita^1,4 (1.Tottori Univ.(Japan), 2.NIMS(Japan), 3.Univ. of Tokyo(Japan), 4.Tottori Integrated Frontier Res. Center(Japan))

https://doi.org/10.7567/SSDM.2016.B-1-04

2016 International Conference on Solid State Devices and Materials

[B-1-04] Switching Mechanism in Resistive Random Access Memory by First-Principles Calculation Using Practical Model Based on Experimental Results