3:55 PM - 4:15 PM
[B-2-02] Study about the Ion Beam Etching (IBE) Process for the High Density Spintronic Devices and its Damage Recovery by the Oxygen Showering Post-treatment (OSP)
○J. Jeong1,2, T. Endoh1,3,4
(1.Tohoku Univ.(Japan), 2.Samsung Electronics Co. Ltd(Korea), 3.CIES, Tohoku Univ.(Japan), 4.JST-ACCEL(Japan))
https://doi.org/10.7567/SSDM.2016.B-2-02