Investigation of variability in Vertical Resistive RAM (VRRAM): Physical Model

G. Piccolboni

doi:https://doi.org/10.7567/SSDM.2016.B-7-04

2016 International Conference on Solid State Devices and Materials

Sep 26, 2016 - Sep 29, 2016
Tsukuba International Congress Center, Tsukuba, Japan

3:10 PM - 3:30 PM

[B-7-04] Investigation of variability in Vertical Resistive RAM (VRRAM): Physical Model

^○G. Piccolboni¹, G. Molas¹, D. Garbin¹, T. Werner¹, E. Vianello¹, B. DeSalvo¹, G. Ghibaudo², L. Perniola¹ (1.CEA-LETI(France), 2.IMEP-LAHC CNRS(France))

https://doi.org/10.7567/SSDM.2016.B-7-04

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